Semiconductor device with reliable high-voltage gate oxide and method of manufacture thereof
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United States of America Patent
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Mar 11, 2014
Grant Date -
May 23, 2013
app pub date -
Dec 21, 2012
filing date -
Sep 5, 2006
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Abstract
A semiconductor device including a capacitor and a proximate high-voltage gate having a boron-barrier layer that ideally serves as part of both the capacitor dielectric and the (high voltage) HV gate oxide. The boron-barrier layer is preferably formed over a poly oxide layer that is in turn deposited on a substrate infused to create a neighboring wells, and N-well over which the capacitor will be formed, and P-well to be overlaid by the HV gate. The boron-barrier helps to reduce or eliminate the harmful effects of boron diffusion from the P-well during TEOS deposition of the gate oxide material.
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