Semiconductor apparatus

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United States of America Patent

PATENT NO 9368390
APP PUB NO 20130130496A1
SERIAL NO

13743125

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Abstract

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A method for fabricating a semiconductor apparatus including providing a first silicon substrate having a first contact, wherein providing the first silicon substrate comprises forming a silicide layer between the first silicon substrate and a first metal layer. The method further includes providing a second silicon substrate having a second contact comprising a second metal layer and placing the first contact in contact with the second contact. The method further includes heating the first and second metal layers to form a metallic alloy, whereby the metallic alloy bonds the first contact to the second contact.

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Patent Owner(s)

Patent OwnerAddress
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD8 LI-HSIN RD 6 HSINCHU SCIENCE PARK HSINCHU 300-78

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Lee, Hsin-Kuei Hsinchu, TW 2 2
Ni, Chyi-Tsong Hsinchu, TW 72 234
Su, Ching-Hou Hsinchu, TW 23 120
Wang, I-Shi Sanxia Township, TW 32 85

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