METHOD OF PROGRAMMING A NONVOLATILE MEMORY DEVICE

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United States of America Patent

APP PUB NO 20130132644A1
SERIAL NO

13615889

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Abstract

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A method of programming a nonvolatile memory device including a page buffer is provided. The method includes loading first page data and second page data into the page buffer; performing, by the page buffer, a first selective dump operation on the first page data and the second page data to generate first interleaved page data; performing, by the page buffer, a second selective dump operation on the first page data and the second page data to generate second interleaved page data; and programming the first interleaved page data and the second interleaved page data into a multi-level cell block.

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Patent Owner(s)

Patent OwnerAddress
SAMSUNG ELECTRONICS CO LTDGYEONGGI DO KOREA SUWON SUWON GYEONGGI-DO

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
CHOI, Seong-Hyeog Hwaseong-si, KR 9 70
KONG, Jun-jin Yongin-si, KR 90 1462
SON, Hong-Rak Anyang-si, KR 44 423
YOON, Sang-Yong Seoul, KR 16 688

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