Method for constant power density scaling

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United States of America Patent

PATENT NO 9069925
APP PUB NO 20130132923A1
SERIAL NO

13742165

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Abstract

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A method for constant power density scaling in MOSFETs is provided. A method for manufacturing an integrated circuit includes computing fixed scaling factors for a first fabrication process based on a second fabrication process, computing settable scaling factors for the integrated circuit to be fabricated using the first fabrication process, determining parameters of the integrated circuit based on the settable scaling factors, and manufacturing the integrated circuit using the determined parameters. The first fabrication process creates devices having a smaller device dimension than the second fabrication process and the settable scaling factors are set based on the fixed scaling factors.

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Patent Owner(s)

Patent OwnerAddress
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD8 LI-HSIN RD 6 HSINCHU SCIENCE PARK HSINCHU 300-78

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Wann, Clement Hsingjen Carmel, US 301 17658

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