SEMICONDUCTOR LIGHT EMITTING ELEMENT, METHOD OF MANUFACTURE THEREOF, AND MANUFACTURING SYSTEM OF SEMICONDUCTOR LIGHT EMITTING ELEMENT
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United States of America Patent
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Issued Date -
May 30, 2013
app pub date -
Sep 14, 2012
filing date -
Nov 30, 2011
priority date (Note) -
Abandoned
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Abstract
Manufacturing variation (production fluctuation) of designed doping concentration and the concentration distribution in the direction of depth can be inhibited and light emitting output can be improved and stabilized. A capacitance measuring step, wherein, after the formation of a p-type electrode 11 and an n-type electrode 12, the capacitance measuring section measures the capacitance between the p-type electrode 11 and the n-type electrode 12; an impurity concentration distribution computing step (not shown), wherein an impurity concentration distribution computing section computes the impurity concentration distribution from the measured capacitance; and a first impurity concentration distribution controlling step (not shown), wherein a first impurity concentration distribution controlling section controls by controlling the MOCVD section so that maximum light emitting output can be obtained at the time of the light emitting layer formation in the next lot or substrate, with the lowest value of the computed impurity concentration distribution as a characterizing amount.
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