Thin film transistor having an oxide semiconductor thin film formed on a multi-source drain electrode
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United States of America Patent
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May 19, 2015
Grant Date -
May 30, 2013
app pub date -
Apr 5, 2011
filing date -
Apr 14, 2010
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Abstract
A semiconductor device (100A) according to the present invention includes an oxide semiconductor layer (31a), first and second source electrodes (52a1 and 52a2), and first and second drain electrodes (53a1 and 53a2). The second source electrode (52a2) is formed to be in contact with a top surface of the first source electrode and inner to the first source electrode (52a1). The second drain electrode (53a2) is formed to be in contact with a top surface of the first drain electrode (53a1) and inner to the first drain electrode (53a1). The oxide semiconductor layer (31a) is formed to be in contact with the top surface of the first source electrode (52a1) and the top surface of the first drain electrode (53a1).
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