High electron mobility transistor structure with improved breakdown voltage performance
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United States of America Patent
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Nov 11, 2014
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app pub date -
Oct 12, 2012
filing date -
Nov 29, 2011
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Abstract
A high electron mobility transistor (HEMT) includes a silicon substrate, an unintentionally doped gallium nitride (UID GaN) layer over the silicon substrate. The HEMT further includes a donor-supply layer over the UID GaN layer, a gate structure, a drain, and a source over the donor-supply layer. The HEMT further includes a dielectric layer having one or more dielectric plug portions in the donor-supply layer and top portions between the gate structure and the drain over the donor-supply layer. A method for making the HEMT is also provided.
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