Hybrid Fin field-effect transistors
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United States of America Patent
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May 13, 2014
Grant Date -
May 30, 2013
app pub date -
May 4, 2012
filing date -
Nov 30, 2011
priority date (Note) -
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Abstract
A hybrid Fin Field-Effect Transistor (FinFET) includes a first and a second FinFET. The first FinFET includes a first channel region formed of a first semiconductor fin, and a first source region and a first drain region of a first conductivity type. The second FinFET includes a second channel region formed of a second semiconductor fin, a second source region of a second conductivity type opposite the first conductivity type, and a second drain region of the first conductivity type. The second source region and the second drain region are connected to opposite ends of the second channel region. The first and the second gate electrodes are interconnected. The first and the second source regions are electrically interconnected. The first and the second drain regions are electrically interconnected.
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