Metal shielding layer in backside illumination image sensor chips and methods for forming the same
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United States of America Patent
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Dec 29, 2015
Grant Date -
May 30, 2013
app pub date -
Mar 14, 2012
filing date -
Nov 30, 2011
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Abstract
A device includes a semiconductor substrate having a front side and a backside. A photo-sensitive device is disposed at a surface of the semiconductor substrate, wherein the photo-sensitive device is configured to receive a light signal from the backside of the semiconductor substrate, and convert the light signal to an electrical signal. An amorphous-like adhesion layer is disposed on the backside of the semiconductor substrate. The amorphous-like adhesion layer includes a compound of nitrogen and a metal. A metal shielding layer is disposed on the backside of the semiconductor substrate and contacting the amorphous-like adhesion layer.
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