Tunnel field-effect transistor with narrow band-gap channel and strong gate coupling
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United States of America Patent
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Apr 15, 2014
Grant Date -
May 30, 2013
app pub date -
Jan 14, 2013
filing date -
Jul 25, 2007
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Abstract
A semiconductor device and the methods of forming the same are provided. The semiconductor device includes a low energy band-gap layer comprising a semiconductor material; a gate dielectric on the low energy band-gap layer; a gate electrode over the gate dielectric; a first source/drain region adjacent the gate dielectric, wherein the first source/drain region is of a first conductivity type; and a second source/drain region adjacent the gate dielectric. The second source/drain region is of a second conductivity type opposite the first conductivity type. The low energy band-gap layer is located between the first and the second source/drain regions.
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