METHOD FOR FORMING HIGH MOBILITY CHANNELS IN III-V FAMILY CHANNEL DEVICES
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United States of America Patent
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Issued Date -
May 30, 2013
app pub date -
Feb 28, 2012
filing date -
Nov 30, 2011
priority date (Note) -
Abandoned
status (Latency Note)
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Abstract
Provided is a method of fabricating a semiconductor device. The method includes forming a buffer layer over a surface of a silicon substrate. The method further includes forming openings that extend into the buffer layer. The method includes forming a shallow trench isolation (STI) structures in each of the openings. The method includes removing a predetermined amount of a top surface of the buffer layer relative to a top surface of the STI structures. The method includes forming an insulator layer over the top surface of the buffer layer and forming a channel layer over the insulator layer.
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