Uniform shallow trench isolation regions and the method of forming the same
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United States of America Patent
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Sep 22, 2015
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Nov 30, 2011
filing date -
Nov 30, 2011
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Abstract
A method includes performing a plasma treatment on a first surface of a first material and a second surface of a second material simultaneously, wherein the first material is different from the second material. A third material is formed on treated first surface of the first material and on treated second surface of the second material. The first, the second, and the third materials may include a hard mask, a semiconductor material, and an oxide, respectively.
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