Method of modifying a low k dielectric layer having etched features and the resulting product

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United States of America Patent

PATENT NO 8846528
APP PUB NO 20130137261A1
SERIAL NO

13306340

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Abstract

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A dielectric layer having features etched thereon and a low dielectric constant, and that is carried by a semiconductor substrate. The etched dielectric layer is modified so its surface energy is reduced by at least one of: (a) applying thermal energy to the layer to cause the layer temperature to be between 100 C and 400 C; (b) irradiating the layer with electromagnetic energy; and/or (c) irradiating the layer with free ions.

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Patent Owner(s)

Patent OwnerAddress
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTDHSINCHU

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Chou, Chia-Cheng Keelung, TW 30 208
Ko, Chung-Chi Nantou, TW 133 1368
Lin, Keng-Chu Ping-Tung, TW 209 714
Liou, Joung-Wei Zhudong Town, TW 66 543

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