GALLIUM NITRIDE GROWTH METHOD ON SILICON SUBSTRATE

United States of America Patent

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Issued Date
Jun 6, 2013
app pub date
Dec 1, 2011
filing date
Dec 1, 2011

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Abandoned

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Abstract

A semiconductor structure includes a silicon substrate; more than one bulk layer of group-III/group-V (III-V) compound semiconductor atop the silicon substrate; and each bulk layer of the group III-V compound is separated by an interlayer.

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Patent Owner(s)

Patent Owner	Address
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD	NO 8 LI-HSIN 6 ROAD HSINCHU SCIENCE PARK HSINCHU 30077

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H01L:SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICE....

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[Patents Count]

Inventor(s)

Inventor Name	Address	# of filed Patents	Total Citations
CHEN, Chi-Ming	Zhubei City, TW	191	1511
HWANG, Ho-Yung David	Hsinchu, TW	46	361
LIN, Hung-Ta	Hsinchu City, TW	44	945
LIU, Po-Chun	Hsinchu City, TW	106	466
TSAI, Chia-Shiung	Hsinchu, TW	515	6971
YU, Chung-Yi	Hsinchu, TW	191	1387

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GALLIUM NITRIDE GROWTH METHOD ON SILICON SUBSTRATE

Number of patents in Portfolio can not be more than 2000

United States of America Patent

13308997

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13308997

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