SEMICONDUCTOR DEVICE, METHOD FOR MANUFACTURING SAME, AND DISPLAY DEVICE
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United States of America Patent
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Issued Date -
Jun 6, 2013
app pub date -
Feb 22, 2011
filing date -
Feb 26, 2010
priority date (Note) -
Abandoned
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Abstract
A semiconductor device (100) according to the present invention includes: an oxide semiconductor layer (31) formed on an insulating layer (21), the oxide semiconductor layer (31) containing at least one element selected from the group consisting of In, Zn, and Sn; first and second sacrificial layers (41a) and (41b) formed, with an interspace from each other, on the oxide semiconductor layer (31); a second electrode (52a) formed in contact with an upper face of the first sacrificial layer (41a) and an upper face of the oxide semiconductor layer (31); and a third electrode (52b) formed in contact with an upper face of the second sacrificial layer (41b) and an upper face of the oxide semiconductor layer (31). The first and second sacrificial layers (41a) and (41b) contain an oxide having at least one element selected from the group consisting of Zn, Ga, Mg, Ca, and Sr.
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