Circuit structure having islands between source and drain
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United States of America Patent
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Dec 30, 2014
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N/A
app pub date -
Dec 1, 2011
filing date -
Dec 1, 2011
priority date (Note) -
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Abstract
A circuit structure includes a substrate, an unintentionally doped gallium nitride (UID GaN) layer over the substrate, a donor-supply layer over the UID GaN layer, a gate structure, a drain, and a source over the donor-supply layer. A number of islands are over the donor-supply layer between the gate structure and the drain. The gate structure disposed between the drain and the source. The gate structure is adjoins at least a portion of one of the islands and/or partially disposed over at least a portion of at least one of the islands.
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