Fin-like field effect transistor (FinFET) device and method of manufacturing same
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United States of America Patent
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Nov 17, 2015
Issued Date -
N/A
app pub date -
Feb 1, 2013
filing date -
Oct 18, 2010
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Abstract
A FinFET device and method for fabricating a FinFET device is disclosed. An exemplary method includes providing a semiconductor substrate; forming a fin structure over the semiconductor substrate, the fin structure including a first material portion over the semiconductor substrate and a second material portion over the first material portion; forming a gate structure over a portion of the fin structure, such that the gate structure traverses the fin structure, thereby separating a source region and a drain region of the fin structure, wherein the source and drain regions of the fin structure define a channel therebetween; removing the second material portion from the source and drain regions of the fin structure; and after removing the second material portion, forming a third material portion in the source and drain regions of the fin structure.
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