Methods for forming MEMS devices

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United States of America Patent

PATENT NO 8623768
APP PUB NO 20130140650A1
SERIAL NO

13310422

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Abstract

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A method includes forming a Micro-Electro-Mechanical System (MEMS) device on a front surface of a substrate. After the step of forming the MEMS device, a through-opening is formed in the substrate, wherein the through-opening is formed from a backside of the substrate. The through-opening is filled with a dielectric material, which insulates a first portion of the substrate from a second portion of the substrate. An electrical connection is formed on the backside of the substrate. The electrical connection is electrically coupled to the MEMS device through the first portion of the substrate.

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Patent Owner(s)

Patent OwnerAddress
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTDHSINCHU

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Hsieh, Yuan-Chih Hsin-Chu, TW 102 1115
Lee, Te-Hao Hsin-Chu, TW 23 294

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