Self-aligned implants to reduce cross-talk of imaging sensors
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United States of America Patent
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Jul 1, 2014
Grant Date -
Jun 6, 2013
app pub date -
Jan 8, 2013
filing date -
Aug 30, 2010
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Abstract
A method of preparing self-aligned isolation regions between two neighboring sensor elements on a substrate. The method includes patterning an oxide layer to form an opening between the two neighboring sensor elements on the substrate. The method further includes performing a first implant to form a deep doped region between the two neighboring sensor elements and starting at a distance below a top surface of the substrate. The method further includes performing a second implant to form a shallow doped region between the two neighboring sensor elements, wherein a bottom portion of the shallow doped region overlaps with a top portion of the deep doped region.
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