Localized carrier lifetime reduction

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United States of America Patent

PATENT NO 9698044
SERIAL NO

13308957

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Abstract

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A semiconductor structure includes a substrate, a first power device and a second power device in the substrate, at least one isolation feature between the first and second power device, and a trapping feature adjoining the at least one isolation feature in the substrate.

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Patent Owner(s)

Patent OwnerAddress
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTDHSINCHU

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Cai, Jun Scarborough, US 184 1618
Kalnitsky, Alex San Francisco, US 28 438
Liu, Ruey-Hsin Hsinchu, TW 179 1225
Tuan, Hsiao-Chin Judong County, TW 57 583
Yao, Chih-Wen Hsinchu, TW 30 147

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