TSV structures and methods for forming the same

Number of patents in Portfolio can not be more than 2000

United States of America Patent

PATENT NO 8803316
APP PUB NO 20130140690A1
SERIAL NO

13311692

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Abstract

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A device includes a substrate having a front side and a backside, a through-via extending from the backside to the front side of the substrate, and a conductive pad on the backside of the substrate and over the through-via. The conductive pad has a substantially planar top surface. A conductive bump has a non-planar top surface over the substantially planar top surface and aligned to the through-via. The conductive bump and the conductive pad are formed of a same material. No interface is formed between the conductive bump and the conductive pad.

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Patent Owner(s)

Patent OwnerAddress
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTDHSINCHU

International Classification(s)

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Chen, Hsin-Yu Taipei, TW 193 1239
Chiou, Wen-Chih Miaoli, TW 414 9438
Lin, Jing-Cheng Hsin-Chu, TW 575 17188
Lin, Yung-Chi Su-Lin, TW 99 1736
Wu, Tsang-Jiuh Hsin-Chu, TW 112 1253
Yang, Ku-Feng Dali, TW 109 1959

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