Reacted layer for improving thickness uniformity of strained structures
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United States of America Patent
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Jun 3, 2014
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app pub date -
Dec 1, 2011
filing date -
Dec 1, 2011
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Abstract
Methods are disclosed of forming and removing a reacted layer on a surface of a recess to provide mechanisms for improving thickness uniformity of a semiconductor material formed in the recess. The improved thickness uniformity in turn improves the uniformity of device performance.
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