Techniques providing photoresist removal
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United States of America Patent
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May 27, 2014
Grant Date -
Jun 6, 2013
app pub date -
Dec 6, 2011
filing date -
Dec 6, 2011
priority date (Note) -
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Abstract
A method for manufacturing a semiconductor device includes forming a patterned photoresist layer over a substrate, performing a plasma ashing process to the patterned photoresist layer, thereby removing a portion of the patterned photoresist layer, exposing the patterned photoresist layer to broadband ultraviolet radiation and ozone, thereby removing other portions of the patterned photoresist layer, and performing a cleaning of the patterned photoresist layer after exposing the patterned photoresist layer to broadband ultraviolet radiation and ozone.
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