RESISTIVE RANDOM ACCESS MEMORY DEVICES AND METHODS OF MANUFACTURING THE SAME

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United States of America Patent

APP PUB NO 20130146829A1
SERIAL NO

13570653

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Abstract

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Resistive random access memory (RRAM) devices, and methods of manufacturing the same, include a RRAM device having a switching device, and a storage node connected to the switching device, wherein the storage node includes a first electrode, a metal oxide layer, and a second electrode sequentially stacked. The metal oxide layer contains a semiconductor material element affecting resistance of the storage node.

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Patent Owner(s)

Patent OwnerAddress
SAMSUNG ELECTRONICS CO LTD129 SAMSUNG-RO YEONGTONG-GU SUWON-SI GYEONGGI-DO 16677 16677

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
CHANG, Man Gwangju, KR 22 211
KIM, Chang-jung Yongin-si, KR 113 14761
KIM, Kyung-min Seoul, KR 109 694
KIM, Young-bae Seoul, KR 54 538
LEE, Chang-bum Seoul, KR 29 389
LEE, Seung-ryul Seoul, KR 22 222

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