Phase-change memory device having multiple diodes
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United States of America Patent
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Apr 29, 2014
Grant Date -
Jun 13, 2013
app pub date -
Jan 30, 2013
filing date -
Jul 6, 2010
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Abstract
A phase-change memory device with an improved current characteristic is provided. The phase-change memory device includes a metal word line, a semiconductor layer of a first conductivity type being in contact with the metal word line, and an auxiliary diode layer being in contact with metal word line and the semiconductor layer.
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