QUANTUM DOT-MATRIX THIN FILM AND METHOD OF PRODUCING THE SAME

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United States of America Patent

APP PUB NO 20130146834A1
SERIAL NO

13594141

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Abstract

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A quantum dot-matrix thin film and a method of preparing a quantum dot-matrix thin film are provided. The thin film includes quantum dots; an inorganic matrix in which the quantum dots are imbedded; and an interface layer disposed between the quantum dots and the inorganic matrix to surround surfaces of the quantum dots. The method includes preparing a quantum dot solution in which quantum dots with inorganic ligands are dispersed; adding a matrix precursor to the quantum dot solution; coating the quantum dot solution comprising the matrix precursor on a substrate; and annealing the substrate coated with the quantum dot solution.

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Patent Owner(s)

Patent OwnerAddress
SAMSUNG ELECTRONICS CO LTDSUWON-SI

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
CHO, Kyung-sang Gwacheon-si, KR 33 657
CHOI, Byoung-lyong Seoul, KR 67 783
KU, Ji-yeon Yongin-si, KR 5 35

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