Semiconductor light emitting device
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United States of America Patent
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May 6, 2014
Grant Date -
Jun 13, 2013
app pub date -
Dec 6, 2012
filing date -
Dec 7, 2011
priority date (Note) -
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Abstract
A semiconductor light emitting device includes: n-type and p-type semiconductor layers; and an active layer disposed between the n-type and p-type semiconductor layers. The active layer has a structure in which a plurality of quantum well layers and a plurality of quantum barrier layers are alternately disposed, wherein the plurality of quantum well layers are made of AlxInyGa1-x-yN (0≦x<1, 0
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