SiC crystalline on Si substrates to allow integration of GaN and Si electronics

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United States of America Patent

PATENT NO 10014291
SERIAL NO

13760496

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Abstract

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A silicon substrate with a GaN-based device and a Si-based device on the silicon substrate is provided. The silicon substrate includes the GaN-based device on a SiC crystalline region. The SiC crystalline region is formed in the silicon substrate. The silicon substrate also includes the Si-based device on a silicon region, and the silicon region is next to the SiC crystalline region on the silicon substrate.

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Patent Owner(s)

Patent OwnerAddress
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTDHSINCHU

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Kalnitsky, Alex San Francisco, US 28 438
Thei, Kong-Beng Pao-Shan Village, TW 240 3239
Tsai, Chun Lin Hsinchu, TW 129 691
Tuan, Hsiao-Chin Jhudong County, TW 57 583
Yu, Jiun-Lei Jerry Zhudong Township, TW 87 471

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