Structure including voltage controlled negative resistance
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United States of America Patent
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Sep 3, 2013
Grant Date -
Jun 13, 2013
app pub date -
Dec 12, 2011
filing date -
Dec 12, 2011
priority date (Note) -
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Abstract
Aspects of the invention provide a semiconductor tunneling device including voltage controlled negative resistance. In one embodiment, the semiconductor tunneling device includes: at least one pair of spaced apart terminals; an inter-level dielectric (ILD) layer between the at least one pair of spaced apart terminals; and a dielectric capping layer extending continuously over the at least one pair of spaced apart terminals and the ILD layer.
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