Mechanisms for forming stressor regions in a semiconductor device
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United States of America Patent
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Mar 18, 2014
Grant Date -
Jun 13, 2013
app pub date -
Dec 13, 2011
filing date -
Dec 13, 2011
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Abstract
The embodiments of processes and structures described above provide mechanisms for improving mobility of carriers. The dislocations in the source and drain regions and the strain created by the doped epitaxial materials next to the channel region of a transistor both contribute to the strain in the channel region. As a result, the device performance is improved.
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