Integrated semiconductor structure for SRAM and fabrication methods thereof
Number of patents in Portfolio can not be more than 2000
United States of America Patent
Stats
-
Jan 7, 2014
Grant Date -
Jun 13, 2013
app pub date -
Dec 10, 2012
filing date -
Feb 17, 2010
priority date (Note) -
In Force
status (Latency Note)
Importance
Abstract
A SRAM device with metal gate transistors is provided. The SRAM device includes a PMOS structure and an NMOS structure over a substrate. Each of the PMOS and the NMOS structure includes a p-type metallic work function layer and an n-type metallic work function layer. The p-type work metallic function layer and the n-type metallic work function layer form a combined work function for the PMOS and the NMOS structures.
First Claim
Family
International Classification(s)
Cited Art Landscape
Patent Citation Ranking
Advertisement
Advertisement
Advertisement
Recipient Email Address
Recipient Email Address
Comment
Recipient Email Address
Add to Portfolio(s)
To add this patent to one, or more, of your portfolios, simply click the add button.
This Patent is in these Portfolios:
Add to additional portfolios:
Last Refreshed On:
Changes done successfully