Semiconductor device with bump structure on an interconncet structure

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United States of America Patent

PATENT NO 9385076
APP PUB NO 20130147031A1
SERIAL NO

13313677

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Abstract

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A semiconductor device includes a post-passivation interconnect (PPI) structure having a landing pad region. A polymer layer is formed on the PPI structure and patterned with a first opening and a second opening to expose portions of the landing pad region. The second opening is a ring-shaped opening surrounding the first opening. A bump structure is formed on the polymer layer to electrically connect the landing pad region through the first opening and the second opening.

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Patent Owner(s)

Patent OwnerAddress
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD8 LI-HSIN RD 6 HSINCHU SCIENCE PARK HSINCHU 300-78

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Chen, Hsien-Wei Sinying, TW 976 9710
Lu, Wen-Hsiung Jhonghe, TW 127 2473
Wu, Yi-Wen Xizhi, TW 94 912

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