Integrated technology for partial air gap low K deposition
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United States of America Patent
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Jan 7, 2014
Grant Date -
Jun 13, 2013
app pub date -
Dec 7, 2011
filing date -
Dec 7, 2011
priority date (Note) -
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Abstract
A semiconductor device includes a semiconductor body and a low K dielectric layer overlying the semiconductor body. A first portion of the low K dielectric layer comprises a dielectric material, and a second portion of the low K dielectric layer comprise an air gap, wherein the first portion and the second portion are laterally disposed with respect to one another. A method for forming a low K dielectric layer is also disclosed and includes forming a dielectric layer over a semiconductor body, forming a plurality of air gaps laterally disposed from one another in the dielectric layer, and forming a capping layer over the dielectric layer and air gaps.
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