Three-dimensional non-volatile memory device, memory system including the same and method of manufacturing the same
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United States of America Patent
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Dec 16, 2014
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Jun 13, 2013
app pub date -
Aug 31, 2012
filing date -
Dec 13, 2011
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Abstract
A three-dimensional (3-D) non-volatile memory device includes a plurality of vertical channel layers protruding from a substrate, a plurality of interlayer insulating layers and a plurality of memory cells stacked alternately along the plurality of vertical channel layers, and an air gap formed in the plurality of interlayer insulating layers disposed between the plurality of memory cells, so that capacitance between word lines is reduced to thus improve a program speed.
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