ANTIFUSE-BASED MEMORY CELLS HAVING MULTIPLE MEMORY STATES AND METHODS OF FORMING THE SAME
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United States of America Patent
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Issued Date -
Jun 13, 2013
app pub date -
Dec 8, 2011
filing date -
Dec 8, 2011
priority date (Note) -
Abandoned
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Abstract
In some aspects, a memory cell is provided that includes a steering element and a metal-insulator-metal (“MIM”) stack coupled in series with the steering element. The MIM stack includes a first dielectric material layer and a second dielectric material layer disposed on the first dielectric material layer, without a metal or other conductive layer disposed between the first dielectric material layer and the second dielectric material layer. Numerous other aspects are provided.
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