Nonvolatile semiconductor memory device and read method for the same
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United States of America Patent
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Sep 16, 2014
Grant Date -
Jun 13, 2013
app pub date -
Jun 18, 2012
filing date -
Jun 27, 2011
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Abstract
A nonvolatile semiconductor memory device includes: word lines; bit lines formed so as to three-dimensionally cross the word lines; and a cross-point cell array including cells each provided at a corresponding one of three-dimensional cross-points of the word lines and the bit lines. The cells include: a memory cell including a memory element that operates as a memory by reversibly changing in resistance value between at least two states based on an electrical signal; and an offset detection cell having a constant resistance value that is higher than the resistance value of the memory element in a high resistance state which is a state of the memory element when operating as the memory.
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