Backside illuminated CMOS image sensor
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United States of America Patent
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Sep 1, 2015
Grant Date -
Jun 13, 2013
app pub date -
Mar 9, 2012
filing date -
Dec 9, 2011
priority date (Note) -
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Abstract
A backside illuminated CMOS image sensor comprises a photo active region formed over a substrate using a front side ion implantation process and an extended photo active region formed adjacent to the photo active region, wherein the extended photo active region is formed by using a backside ion implantation process. The backside illuminated CMOS image sensor may further comprise a laser annealed layer on the backside of the substrate. The extended photo active region helps to increase the number of photons converted into electrons so as to improve quantum efficiency.
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