Metal silicide nanowire arrays for anti-reflective electrodes in photovoltaics
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United States of America Patent
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Oct 20, 2015
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Jun 13, 2013
app pub date -
Dec 10, 2012
filing date -
Dec 9, 2011
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Abstract
A method of fabricating single-crystalline metal silicide nanowires for anti-reflective electrodes for photovoltaics is provided that includes exposing a surface of a metal foil to oxygen or hydrogen at an elevated temperature, and growing metal silicide nanowires on the metal foil surface by flowing a silane gas mixture over the metal foil surface at the elevated temperature, where spontaneous growth of the metal silicide nanowires occur on the metal foil surface, where the metal silicide nanowires are post treated for use as an electrode in a photovoltaic cell or used directly as the electrode in the photovoltaic cell.
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