Integrated Circuits on Ceramic Wafers Using Layer Transfer Technology
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United States of America Patent
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Issued Date -
Jun 20, 2013
app pub date -
Jun 20, 2012
filing date -
Jun 22, 2011
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Abandoned
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Abstract
Novel integrated circuits (ICs) on ceramic wafers and methods of fabricating ICs on ceramic wafers are disclosed. In one embodiment, an active layer comprising IC circuit components is coupled to a selected wafer comprising a ceramic. A surface of the ceramic is processed to enable direct bonding between the selected wafer and the active layer. Another embodiment comprises an active layer comprising IC circuit components and a selected wafer comprising a ceramic and an intermediate layer. A surface of the intermediate layer is processed to enable direct bonding. In some embodiments the intermediate layer comprises a material selected from the following: silicon carbide, silicon dioxide, silicon nitride and diamond. Methods of fabrication are described, wherein layer transfer technology is employed to form active layers and to couple the active layers to the selected wafers.
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