METHODS OF GROWING III-V SEMICONDUCTOR MATERIALS, AND RELATED SYSTEMS
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United States of America Patent
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Issued Date -
Jun 27, 2013
app pub date -
Dec 23, 2011
filing date -
Dec 23, 2011
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Abstract
Methods and systems are increase the number of Group V ions formed from Group V precursors in methods of forming III-V semiconductor materials to enhance the growth rate of the III-V semiconductor material. In some embodiments, a Group V precursor is heated and at least partially decomposed in a heated diffuser to form Group V ions. In additional embodiments, microwave energy is applied to a Group V precursor and the Group V precursor is at least partially decomposed to form Group V ions. Group III ions are also formed, and the Group III and Group V ions are used to form a III-V semiconductor material within a chamber.
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