ONE-TIME PROGRAMMABLE MEMORY AND METHOD FOR MAKING THE SAME
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United States of America Patent
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app pub date -
Nov 28, 2012
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Jun 21, 2010
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Abandoned
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Abstract
A one time programmable nonvolatile memory formed from metal-insulator-semiconductor cells. The cells are at the crosspoints of conductive gate lines and intersecting doped semiconductor lines formed in a semiconductor substrate.
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