TARGETED TEMPERATURE COMPENSATION IN CHEMICAL VAPOR DEPOSITION SYSTEMS
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United States of America Patent
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Issued Date -
Jul 4, 2013
app pub date -
Dec 29, 2011
filing date -
Dec 29, 2011
priority date (Note) -
Abandoned
status (Latency Note)
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Abstract
Targeted temperature compensation for use with a chemical vapor deposition (CVD) apparatus. A localized temperature monitoring system is configured to provide localized temperature information representing surface temperatures of portions of the one or more wafers on a wafer carrier while the wafer carrier is rotating in a CVD process. A temperature profiling system is configured to generate a temperature profile that is indicative of localized cold spots on a surface of the one or more wafers. The temperature profile is based on the localized temperature information. A targeted heating system is configured to selectively apply localized heat to the localized cold spots dynamically based on the temperature profile such that a thermal distribution of the surface of the one or more wafers is made more uniform while a CVD process is carried out on the CVD apparatus.
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