COPPER-ELECTROPLATING COMPOSITION AND PROCESS FOR FILLING A CAVITY IN A SEMICONDUCTOR SUBSTRATE USING THIS COMPOSITION

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United States of America Patent

APP PUB NO 20130168255A1
SERIAL NO

13703515

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ATTORNEY / AGENT: (SPONSORED)

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Abstract

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The subject-matter of the present invention is a composition especially intended for filling, by the electroplating of copper, a cavity in a semiconductor substrate such as a “through-via” structure for the production of interconnects in three-dimensional integrated circuits.

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ALCHIMER15 RUE DU BUISSON AUX FRAISES Z I DE LA BONDE MASSY 91300

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Frederich, Nadia Trets, FR 2 9
Gonzalez, José Lombez, FR 7 19
Raynal, Frédéric Paris, FR 5 20

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