ATMOSPHERIC-PRESSURE PLASMA-ENHANCED CHEMICAL VAPOR DEPOSITION
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United States of America Patent
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Issued Date -
Jul 18, 2013
app pub date -
Sep 28, 2011
filing date -
Sep 28, 2010
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Abandoned
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Abstract
Provided are silicon-containing films with a refractive index suitable for antireflection, articles having a surface comprising the films, and atmospheric-pressure plasma-enhanced chemical vapor deposition (AE-PECVD) processes for the formation of surface films and coatings. The processes generally include providing a substrate, providing a precursor comprising silicon, and reacting the precursor with a gas comprising nitrogen (N2) in a low-temperature plasma at atmospheric pressure, wherein the products of the reacting form a film on the substrate. An antireflection coating made by the process can have a refractive index of about 1.5 to about 2.2. Articles are provided having a surface that includes the antireflection coating.
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