RRAM Device With Free-Forming Conductive Filament(s), and Methods of Making Same

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United States of America Patent

APP PUB NO 20130187116A1
SERIAL NO

13353786

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Abstract

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Disclosed herein is an RRAM device with free-forming conductive filament(s), and various methods of making such an RRAM device. In one example, a device disclosed herein includes a first electrode, a second electrode positioned above the first electrode and a variable resistance material positioned between the first and second electrodes, wherein the variable resistance material is a metal oxide with a plurality of metal nano-crystals embedded therein.

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Patent Owner(s)

Patent OwnerAddress
GLOBALFOUNDRIES SINGAPORE PTE LTD60 WOODLANDS INDUSTRIAL PARK D STREET 2 SINGAPORE 738406

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Chen, Tu Pei Singapore, SG 6 16
Tan, Shyue Seng Singapore, SG 99 971
Zhu, Wei Singapore, SG 350 5407

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