CRYSTALLIZATION OF MULTI-LAYERED AMORPHOUS FILMS
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United States of America Patent
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Issued Date -
Aug 8, 2013
app pub date -
Jun 8, 2011
filing date -
Jun 8, 2010
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Abandoned
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Abstract
In one aspect, crystallization of multiple layers of amorphous materials is disclosed. In one embodiment, multiple layers of amorphous materials such as amorphous silicon, silicon carbide, and/or germanium are deposited using deposition methods such as PECVD or sputtering. A layer of metal such as aluminum is deposited on the surface of the deposited amorphous materials using sputtering or evaporation, and the structure is annealed in a hydrogen environment. The structure is contained on a semiconductor substrate, glass, a flexible metal/organic film, or other type of substrate.
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