PROCESS FOR MANUFACTURING A WAFER BY ANNEALING OF BURIED CHANNELS
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United States of America Patent
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app pub date -
Nov 21, 2012
filing date -
Jul 25, 2000
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Abandoned
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Abstract
A process for manufacturing an SOI wafer, including the steps of: forming, in a wafer of semiconductor material, cavities delimiting structures of semiconductor material; thinning out the structures through a thermal process; and completely oxidizing the structures.
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