METAL-INSULATOR TRANSITION SWITCHING DEVICES
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United States of America Patent
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Issued Date -
Aug 15, 2013
app pub date -
Oct 21, 2010
filing date -
Oct 21, 2010
priority date (Note) -
Abandoned
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Abstract
A metal-insulator transition switching device includes a first electrode and a second electrode. A channel region which includes a bulk metal-insulator transition material separates the first electrode and the second electrode. A method for forming a metal-insulator transition switching device includes depositing a layer of bulk metal-insulator transition material in between a first electrode and a second electrode to form a channel region and forming a gate electrode operatively connected to the channel region.
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