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Abstract

A double heterojunction field effect transistor (DHFET) includes a substrate, a buffer layer consisting of GaN back-barrier buffer layer formed on the substrate, a channel layer consisting of an In_xGa_1-xN ternary alloy in one embodiment, and in another embodiment, InGaN/GaN superlattice (SL) formed on the GaN back-barrier buffer layer opposite to the substrate. A GaN spacer layer is formed on the In_xGa_1-xN or InGaN/GaN superlattice channel layer opposite to the GaN buffer layer and a carrier-supplying layer consisting of an Al_1-yIn_yN ternary alloy is formed on the GaN spacer layer opposite to the channel layer. A preferred thickness of the GaN spacer layer is less than about 1.5 nm. The InGaN/GaN SL preferably includes 1 to 5 InGaN—GaN pairs and a preferred thickness of the InGaN layer in the InGaN/GaN SL is equal to or less than about 0.5 nm. A two-dimensional electron gas is formed at the interface between the In_xGa_1-xN or InGaN/GaN SL channel and GaN spacer layers.

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First Claim