Copper Interconnect for III-V Compound Semiconductor Devices
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United States of America Patent
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Issued Date -
Aug 15, 2013
app pub date -
Jun 26, 2012
filing date -
Feb 10, 2012
priority date (Note) -
Abandoned
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Abstract
The present invention provides a copper interconnect for III-V compound semiconductor devices, which comprises a metal contact layer and a copper-containing metal layer, in which the metal contact layer is formed of a material selected from a group consisting of Ti/Pd/Cu, Ti/NiV/Cu, TiW/TiWN/TiW/Cu, TiW/TiWN/TiW/Au, TiW/Cu, and TiW/Au, and the copper-containing metal layer comprises a copper layer. The copper-containing metal layer further includes a metal protection layer covering on the copper layer to prevent the copper layer from oxidation. The metal protection layer is formed of Ni/Au, Ni/Pd/Au, NiV/Au, or solder.
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